Two-dimensional Modeling of Depletion Layer of MESFET GaAs
نویسنده
چکیده
A two-dimensional numerical analysis is presented to investigate the field effect transistor characteristics, the influence of the geometry of the component like distance between the gate and drain, or between gate and source. All simulations revealed the existence of a high electric field region near the gate contact, who create a depopulated zone around the gate, but the preceding studies have neglects the edge effects, which are very significant for the submicron components.
منابع مشابه
A Novel SOI MESFET by Implanted N Layer (INL-SOI) for High Performance Applications
This paper introduces a novel silicon-on-insulator (SOI) metal–semiconductor field-effect transistor (MESFET) with an implanted N layer (INL-SOI MESFET) to improve the DC and radio frequency characteristics. The DC and radio frequency characteristics of the proposed structure are analyzed by the 2-D ATLAS simulator and compared with a conventional SOI MESFET (C-SOI MESFET). The simulated result...
متن کاملAnalytical model for I-V analysis of buried gate MESFET with modulation frequency characteristics
The analysis of frequency-dependent characteristics of an ion-implanted buried-gate GaAs MESFET, with front side illumination has made achieving improved performance in I-V characteristics possible. When photo energy falls on the device, flow of charge carriers changes corresponding to the change in wave length and frequency of incident light. It has been observed that the channel conductance a...
متن کاملTesting of a GaAs MESFET Static RAM
This paper describes the complete test, functional and parametric, of a 1Kb GaAs MESFET SRAM chip. The chip was developed as an evaluation vehicle for a new type of MESFET SRAM cell. The new cell, in contrast with conventional GaAs memory cells, minimizes the leakage current in access transistors of unselected cells. Two algorithms were selected for functional testing: MATS and Galloping Ones a...
متن کاملParallel Implementation of a Gaas Mesfet Electro-thermal Simulation on a Transputer-based System
The numerical simulation of a GaAs MESFET device on a transputer-based parallel system is presented. The physical modelling consists of a comprehensive two-dimensional energy transport model taking into account thermal heating effects within the device lattice. The semiconductor equations were solved by an SOR point iterative method using a finite difference discretisation scheme. Algorithms ta...
متن کاملNUMERICAL INVESTIGATION OF MESH SIZE CONVERGENCE RATE OF THE FINITE ELEMENT METHOD IN MESFET SIMULATIONt
The mesh size convergence rate of the finite element method in two-dimensional GaAs MESFET simulation has been investigated numerically. The equations governing MESFET operation and the finite element formulation of these equations are summarized. The presence of corner singularities at the gate contact endpoints is noteworthy. for such singularities are known to determine the convergence rate ...
متن کامل